A Novel Method of Fabricating Optical Gratings Using the One Step DRIE Process on SOI Wafers

نویسندگان

  • A. Cooper
  • P. T. Docker
  • M. C. Ward
چکیده

This paper describes a novel technique for manufacturing optical gratings using the one step DRIE (Deep Reactive Ion Etching) process. Utilising the notching effect documented in previous work when working with silicon on insulator (SOI) wafers, fully released, intact gratings have now been produced without the requirement for additional releasing processes. The one step process eliminates the possibility of stiction which can occur when “wet” processing chemistry is used in the release of microstructures. It should be noted that all DRIE etching in this work was performed using a Surface Technology Systems DRIE which uses a process developed from the Bosch process (R B Bosch Gmbh 1994 US Patent Specification 4855017 and German Patent Specification 4241045CI) termed ‘time multiplexed deep etching’ (TMDE) [1].

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optical Properties of ZnO Nanowires and Nanorods Synthesized by Two Step Oxidation Process

ZnO nanowires with a diameter of 70 nm and nanorods with a diameter in the range of 100-150 nm and two micrometer in length were grown on glass substrates by resistive evaporation method and applying a two step oxidation process at low temperatures, without using any catalyst, template or buffer layer. XRD pattern of these nanostructures indicated a good crystallinity property with wurtzite hex...

متن کامل

VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK

Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...

متن کامل

Fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator wafers

The authors report on the fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator SOI wafers. These critical angle transmission CAT gratings require 3–5 m tall freestanding grating bars with a very high aspect ratio 100 and smooth sidewalls. In order to meet the challenging geometrical requirements, they modified and improved our previously reported process for the fab...

متن کامل

Direct wafer bonding for MEMS and microelectronics

Direct wafer bonding is a method for fabricating advanced substrates for microelectromechanical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer. SOI wafers offer many advantages over conventional silicon wafers. In IC technology, the switching speed of circuits fabricated on SOI is increased by 20-50% co...

متن کامل

Optical pulse compression based on nonlinear silicon waveguides and chirped Bragg gratings

Due to the growing demand for higher bandwidth, employing optical devices instead of electronic devices in data transmission systems has attracted much attention in recent years. Optical switches, modulators and wavelength converters are a few examples of the required optical devices. CMOS compatible fabrication of these devices, leads to much more growing of this technology. Optical pulse comp...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005